The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Sep. 15, 2022
Applicant:
Renesas Electronics Corporation., Tokyo, JP;
Inventor:
Yasuyuki Morishita, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H10D 84/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/921 (2025.01); H10D 89/60 (2025.01); H10D 89/611 (2025.01);
Abstract
A semiconductor device includes a protection element configured by a MOSFET, and the protection element has a multilayer metal wiring structure. The multilayer metal wiring structure includes drain connection wirings connected to drain regions of the MOSFET and source connection wirings connected to source regions of the MOSFET. In a part of a layer of the multilayer metal wiring structure where both the drain connection wirings and the source connection wirings are present, only either the drain connection wirings or the source connection wirings are laid out in a grained pattern.