The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Oct. 28, 2022
Applicant:
Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei, CN;
Inventors:
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H10D 30/67 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6731 (2025.01); H10D 30/6729 (2025.01); H10D 30/6745 (2025.01); H10D 30/6757 (2025.01); H10D 62/235 (2025.01);
Abstract
A semiconductor device and an electronic device are provided. The semiconductor device includes an insulating substrate, and a non-planar layer disposed on the insulating substrate and including a non-planar structure. The non-planar structure includes a sidewall. An active pattern is configured with at least a part located on the sidewall of the non-planar structure. The active pattern includes a channel located on the sidewall. A ratio of a size of the non-planar structure in a thickness direction of the non-planar layer to a thickness of the active pattern is less than or equal to seven.