The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Dec. 29, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Iljeong Lee, Yongin-si, KR;

Youngwoo Park, Yongin-si, KR;

Wangwoo Lee, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/40 (2006.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10D 30/673 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01); H10D 64/01 (2025.01); H10D 86/021 (2025.01); H10D 86/423 (2025.01); H10D 86/451 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H10K 59/1213 (2023.02);
Abstract

A thin film transistor substrate includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a channel region, a source region and a drain region. The thin film transistor further includes a gate electrode disposed on the semiconductor layer and that includes a lower surface and an upper surface. The thin film transistor includes a gate insulating layer disposed between the gate electrode and the semiconductor layer, and a first insulating layer disposed on the substrate. The first insulating layer exposes the upper surface of the gate electrode and surrounds the gate electrode. The gate electrode may have a shape in which the width of an upper surface thereof is greater than the width of a lower surface thereof.


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