The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Apr. 28, 2022
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Abhijeet Paul, Escondido, CA (US);

Ravi Pramod Kumar Vedula, San Diego, CA (US);

Hyunchul Jung, San Diego, CA (US);

Assignee:

QUALCOMM INCORPORATED, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/60 (2025.01); H03F 3/21 (2006.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/603 (2025.01); H03F 3/211 (2013.01); H10D 30/022 (2025.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract

Disclosed is a transistor of a device that has an asymmetric resistance or an asymmetric capacitive coupling or both. When used in a cascode configuration in an amplifier, low current performance of the amplifier is improved. Asymmetric resistance may be enabled through differentially doping source and drain structures of the transistor and/or through differentially manipulating geometries the source and drain structures. Asymmetric capacitive coupling may be enabled through providing dielectrics and differentially locating the dielectrics above a gate of the transistor. Further, a body of the transistor may be biased.


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