The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Jul. 06, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Ki Hong Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 5/06 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/06 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);
Abstract
A semiconductor device includes a gate structure including alternately stacked conductive layers and insulating layers, channel structures passing through the gate structure. Each of the conductive layers may include a first portion having a first thickness and a second portion having a second thickness thicker than the first thickness, and the second portion may include a first metal layer, a second metal layer in the first metal layer, and a first barrier layer interposed between the first metal layer and the second metal layer.