The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Dec. 10, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Nobuaki Okada, Kawasaki Kanagawa, JP;

Tetsuaki Utsumi, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H10B 10/00 (2023.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); H01L 25/0655 (2013.01); H10B 10/18 (2023.02);
Abstract

According to one embodiment, a semiconductor device includes a semiconductor layer, an element region provided on the semiconductor layer convexly, having a predetermined width in a first direction along a surface of the semiconductor layer, and extending in a second direction along the surface of the semiconductor layer and intersecting the first direction, a gate electrode arranged above the element region, a liner layer covering the gate electrode, and an element separation portion extends in the second direction on both sides of the element region in the first direction, and the liner layer continuously extends from the gate electrode to the element separation portion and the liner layer in the element separation portion lies below the element separation portion.


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