The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
May. 03, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Tae Jin Park, Yongin-si, KR;
Gyul Go, Seoul, KR;
Jun Soo Kim, Seongnam-si, KR;
Gyung Hyun Yoon, Hwaseong-si, KR;
Eui Jun Cha, Seoul, KR;
Hui-Jung Kim, Seongnam-si, KR;
Yoo Sang Hwang, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device and a method for fabricating the same is provided. The semiconductor device includes a lower semiconductor film, a buried insulating film, and an upper semiconductor film which are sequentially stacked; an element isolation film defining an active region inside the substrate and including a material having an etching selectivity with respect to silicon oxide; a first gate trench inside the upper semiconductor film; a first gate electrode filing a part of the first gate trench; a second gate trench inside the element isolation film; and a second gate electrode filling a part of the second gate trench, a bottom side of the element isolation film being inside the lower semiconductor film.