The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Jul. 30, 2021
Applicants:

Seiko Epson Corporation, Tokyo, JP;

Sophia School Corporation, Tokyo, JP;

Inventors:

Yohei Nakagawa, Tokyo to Shinjuke ku, JP;

Shunsuke Ishizawa, Tokyo to Shinjuke ku, JP;

Katsumi Kishino, Akiruno, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/11 (2021.01); G03B 21/20 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/343 (2013.01); G03B 21/2033 (2013.01); H01S 5/11 (2021.01); H01S 5/2054 (2013.01); H01S 5/341 (2013.01);
Abstract

In a light emitting device, a first diametrical size that is the largest size of a columnar part between a substrate side of a light emitting layer and an opposite side of the substrate, the columnar part has a size no larger than the first diametrical size in an area between the substrate side of the light emitting layer and the substrate side of a first semiconductor layer, the columnar part has a size smaller than the first diametrical size in the area between the substrate side of the light emitting layer and the substrate side of the first semiconductor layer, the columnar part has a size no larger than the first diametrical size in an area between the opposite side to the substrate of the light emitting layer, and an opposite side to the substrate of a second semiconductor layer, and the columnar part has a size smaller than the first diametrical size in the area between the opposite side to the substrate of the light emitting layer in the laminating direction, and the opposite side to the substrate of the second semiconductor layer.


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