The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 12, 2021
Applicant:

Advanced Photonics Applications Gmbh, Gerbrunn, DE;

Inventors:

Tim Koslowski, Ochsenfurt, DE;

Nicolas Koslowski, Würzburg, DE;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/028 (2006.01); H01S 5/11 (2021.01); H01S 5/12 (2021.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/028 (2013.01); H01S 5/11 (2021.01); H01S 5/12 (2013.01); H01S 5/1237 (2013.01); H01S 5/22 (2013.01); H01S 5/4025 (2013.01);
Abstract

The invention relates to a method for producing a semiconductor laser comprising the method steps: generating a lateral structure layer, at least in the material abrasion areas, a basic selection of the laser modes amplified or amplifiable through stimulated emission taking place via the lateral structure layer; and generating an optical element for defining the phasing of the amplified or amplifiable laser modes, the optical element being generated in such a manner that it has a distance d to an end of the lateral structure layer in the longitudinal direction of the waveguide ridge, distance d fulfilling the condition m being a natural number (m∈) and λbeing the effective wavelength in the material.


Find Patent Forward Citations

Loading…