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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12308608 B1

PDFFull Text
Date of Patent:
May. 20, 2025

Filed:

Aug. 12, 2021

Semiconductor optical integrated device

Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventors:

Masayoshi Nishita, Tokyo, JP;

Hiroyuki Ishii, Tokyo, JP;

Toshihito Suzuki, Tokyo, JP;

Assignee:

FURUKAWA ELECTRIC CO., LTD., Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Kinam Park

Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/026 (2006.01); H01S 5/0625 (2006.01); H01S 5/068 (2006.01); H01S 5/10 (2021.01); H01S 5/12 (2021.01); H01S 5/14 (2006.01); H01S 5/20 (2006.01); G02B 6/12 (2006.01); H01S 5/50 (2006.01);
U.S. Cl.
CPC ...
H01S 5/026 (2013.01); H01S 5/06256 (2013.01); H01S 5/06817 (2013.01); H01S 5/1092 (2013.01); H01S 5/1209 (2013.01); H01S 5/142 (2013.01); H01S 5/2018 (2013.01); G02B 6/12 (2013.01); H01S 5/50 (2013.01);
Abstract

A semiconductor optical integrated device in which a forward-bias optical device and a semiconductor laser are monolithically integrated on a semiconductor substrate, includes: a passive waveguide portion that is arranged between the forward-bias optical device and the semiconductor laser; and a ground electrode that is arrange on a lower surface of the semiconductor substrate. Further, the semiconductor laser includes a mirror having a length on a side closer to the forward-bias optical device, the forward-bias optical device includes a forward-bias optical-device electrode on a side opposite to a side in contact with the semiconductor substrate, the passive waveguide portion includes a passive waveguide electrode on a side opposite to a side in contact with the semiconductor substrate, and the passive waveguide electrode is electrically connected to the ground electrode.

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