The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Aug. 26, 2021
Ams-osram International Gmbh, Regensburg, DE;
Jens Ebbecke, Rohr in Niederbayern, DE;
AMS-OSRAM INTERNATIONAL GMBH, Regensburg, DE;
Abstract
In at least one embodiment, the environment sensor for sensing at least one environment parameter includes a semiconductor layer sequence, a sheath, the index of refraction of which changes as a function of the environment parameter, and a first electrical contact and a second electrical contact for supplying current to the semiconductor layer sequence. The semiconductor layer sequence has the shape of a generalized cylinder having a main axis. In directions perpendicular to the main axis, the semiconductor layer sequence is at least partly covered by the sheath. The semiconductor layer sequence has an index of refraction which is greater than the index of refraction of the sheath. The semiconductor layer sequence is designed to form laser modes within the environment sensor. Furthermore, the environment sensor is designed such that, in its normal operation, a change in the index of refraction of the sheath causes a change in the electrical resistance of the semiconductor layer sequence as a result of a change in radiation losses within the semiconductor layer sequence.