The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Feb. 27, 2024
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Toshiyuki Hata, Tokyo, JP;
Zen Tomizawa, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 23/34 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 25/16 (2013.01); H01L 23/34 (2013.01); H01L 23/49524 (2013.01); H01L 24/40 (2013.01); H01L 24/83 (2013.01); H01L 2224/40221 (2013.01); H01L 2224/83192 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A semiconductor device including: a first semiconductor chip having a first power transistor and a temperature sensing diode; and a second semiconductor chip having a second power transistor, but not having a temperature sensing diode.
Hata, Toshiyuki. (2025). Semiconductor device including semiconductor chip having power transistor and temperature sensing diode (U.S. Patent No. 12308356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12308356
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile