The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 17, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Kuo-Hui Su, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/76804 (2013.01); H01L 21/76829 (2013.01); H01L 21/31116 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 23/53238 (2013.01);
Abstract

The present disclosure provides a semiconductor device structure with a fluorine-catching layer. The semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a fluorine-catching layer disposed over the second dielectric layer, and a third dielectric layer disposed over the fluorine-catching layer. The semiconductor device structure further includes a conductive via structure penetrating through the third dielectric layer, the fluorine-catching layer, and the second dielectric layer to contact the first dielectric layer.


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