The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Aug. 11, 2021
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Se Ra Hwang, Gyeonggi-do, KR;

Jun Sik Kim, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53223 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor device includes a substrate; multi-level interconnections disposed on the substrate; a first passivation layer containing hydrogen and covering top interconnections among the multi-level interconnections; a second passivation layer disposed over the first passivation layer to prevent out-diffusion of the hydrogen from the first passivation layer; an in-line top dielectric layer over the second passivation layer; an in-line redistribution layer connected to one among the top interconnections by passing through the in-line top dielectric layer, the second passivation layer, and the first passivation layer; and a hydrogen blocking liner disposed between the in-line redistribution layer and the first passivation layer.


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