The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Mar. 29, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Won Tae Koo, Icheon-si, KR;
Jae Hyun Han, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76841 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract
A semiconductor device includes a first conductive layer including a first metal, a second conductive layer electrically connected to the first conductive layer and including a second metal, and an interconnection structure common to a connection portion of the first and second conductive layers. The interconnection structure may include a seed layer on the first conductive layer that includes graphene, and a metal migration barrier layer on the seed layer that includes MXene.
Koo, Won. (2025). Semiconductor device including interconnection structure including mxene and method of manufacturing the same (U.S. Patent No. 12308311). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12308311
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile