The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
May. 05, 2022
Nanya Technology Corporation, New Taipei, TW;
Sheng-Fu Huang, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A semiconductor interconnection structure includes a lower inter-level dielectric layer located above a substrate, a lower metal via located in the lower inter-level dielectric layer, a first horizontal dielectric layer located over the lower inter-level dielectric layer and the lower metal via, an upper inter-level dielectric layer located over the first horizontal dielectric layer and having a dielectric constant smaller than that of the first horizontal dielectric layer, an upper metal via located in the upper inter-level dielectric layer and the first horizontal dielectric layer, and electrically connected to the lower metal via, a diffusion barrier layer located around the upper metal via, and located between the upper inter-level dielectric layer and the upper metal via; and a dielectric sidewall located the diffusion barrier layer and the upper inter-level dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile