The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
May. 17, 2022
Nanya Technology Corporation, New Taipei, TW;
Kuo-Hui Su, Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present disclosure provides a method for preparing a semiconductor device structure with a fluorine-catching layer. The method includes forming a first dielectric layer over a semiconductor substrate, and forming a first conductive via structure in the first dielectric layer. The method also includes forming a second dielectric layer over the first dielectric layer and covering the first conductive via structure, and forming a fluorine-catching layer over the second dielectric layer. The method further includes forming a third dielectric layer over the fluorine-catching layer, and forming a second conductive via structure in the third dielectric layer, the fluorine-catching layer, and the second dielectric layer.