The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Aug. 18, 2023
Applicant:

Industry-academic Cooperation Foundation Gyeongsang National University, Jinju-si, KR;

Inventors:

Jun Hong Park, Jinju-si, KR;

Chang Hwan Oh, Jeollanam-do, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/465 (2006.01); H10D 10/80 (2025.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); H01L 21/02417 (2013.01); H01L 21/02485 (2013.01); H01L 21/02581 (2013.01); H01L 21/465 (2013.01); H10D 10/80 (2025.01); H10D 62/883 (2025.01);
Abstract

An embodiment relates to a method for controlling the surface characteristics and thickness of a multilayer transition metal dichalcogenide thin film. By forming an amorphous transition metal oxide thin film on a multilayer transition metal dichalcogenide thin film, and then treating the multilayer transition metal dichalcogenide thin film having the amorphous transition metal oxide thin film formed thereon with an aqueous solution of ammonium sulfide at least once, the surface characteristics and thickness of the transition metal dichalcogenide can be controlled in a simple and low-cost manner without complex equipment settings for heat treatment, plasma and laser etching, and so on.


Find Patent Forward Citations

Loading…