The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Oct. 16, 2019
Massachusetts Institute of Technology, Cambridge, MA (US);
Jeehwan Kim, Cambridge, MA (US);
Wei Kong, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Apparatus, systems, and methods for forming semiconductor materials (e.g., using nanofabrication) are generally described. In one example, a method comprises formation of a carbon buffer layer on a first substrate and a graphene layer on the carbon buffer layer, followed by removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform, and after removing the graphene layer, forming a first epitaxial layer directly on the carbon buffer layer covalently bonded to the first substrate, wherein the first epitaxial layer comprises a semiconductor. In one example, a method comprises forming an epitaxial layer directly on a carbon buffer layer that is covalently bonded to a substrate, wherein the epitaxial layer comprises a semiconductor, and wherein the carbon buffer layer is a pseudo-graphene layer.