The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Apr. 18, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungjun Oh, Suwon-si, KR;

Seong Geon Lee, Suwon-si, KR;

Dae-Won Kim, Suwon-si, KR;

Kyungduk Lee, Suwon-si, KR;

Youn-Soo Cheon, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/12 (2006.01); G06F 11/00 (2006.01); G11C 29/00 (2006.01); G11C 29/42 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12005 (2013.01); G11C 29/42 (2013.01); G11C 2029/1202 (2013.01);
Abstract

A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a '0' bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.


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