The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Sep. 27, 2023
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Minwoo Byun, Yongin-si, KR;

Wonkyu Kwak, Yongin-si, KR;

Jihyun Ka, Yongin-si, KR;

Minjoo Kim, Yongin-si, KR;

Donghwan Jeon, Yongin-si, KR;

Seoni Jeong, Yongin-si, KR;

Sungchan Hwang, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); G09G 3/3266 (2016.01); G09G 3/3275 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); G09G 2310/0202 (2013.01); G09G 2320/0247 (2013.01);
Abstract

A display apparatus including pixels, each including a driving transistor comprising a first terminal, a second terminal, a first gate, and a second gate electrically connected to the second terminal. Each pixel further includes a first transistor electrically connected to a driving voltage line and the first terminal of the driving transistor, a second transistor electrically connected to the second terminal of the driving transistor and a light-emitting diode, a first capacitor electrically connected to the first gate of the driving transistor and the second terminal of the driving transistor, and a second capacitor electrically connected to the driving voltage line and the second terminal of the driving transistor. A timing at which a first gate signal is applied to a gate of the first transistor and a timing at which a second gate signal is applied to a gate of the second transistor are different from each other.


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