The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 23, 2022
Applicant:

Nichia Corporation, Anan, JP;

Inventors:

Gentaro Tanaka, Tokushima, JP;

Hirofumi Tanaka, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 1/11 (2015.01); C01B 33/113 (2006.01); C03C 17/00 (2006.01); C03C 17/245 (2006.01); C03C 17/34 (2006.01); C23C 14/08 (2006.01); C23C 14/24 (2006.01); C23C 14/58 (2006.01); G02B 1/113 (2015.01);
U.S. Cl.
CPC ...
G02B 1/11 (2013.01); C01B 33/113 (2013.01); C03C 17/007 (2013.01); C03C 17/245 (2013.01); C03C 17/3417 (2013.01); C23C 14/08 (2013.01); C23C 14/243 (2013.01); C23C 14/5873 (2013.01); G02B 1/113 (2013.01); C03C 2217/23 (2013.01); C03C 2217/475 (2013.01); C03C 2218/113 (2013.01); C03C 2218/154 (2013.01); C03C 2218/33 (2013.01); G02B 2207/109 (2013.01);
Abstract

Disclosed are a method for producing an optical thin film having a low refractive index, a thin film forming material, an optical thin film, and an optical member. The method for producing an optical thin film includes forming a vapor deposition film by depositing a thin film forming material on an object in a non-oxidizing atmosphere by a physical vapor deposition method; and bringing the vapor deposition film into contact with a first acidic solution comprising an acidic substance in a range of pH 2.5 or more and pH 3.5 or less to obtain a first thin film having voids, wherein the thin film forming material is a mixture comprising indium oxide and silicon oxide, in which the indium oxide is in a range of 0.230 mol or more and 0.270 mol or less with respect to 1 mol of the silicon oxide.


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