The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Jul. 06, 2021
Applicant:

Pragmatic Semiconductor Limited, Sedgefield, GB;

Inventors:

Scott White, Sedgefield, GB;

Richard Price, Sedgefield, GB;

Feras Alkhalil, Sedgefield, GB;

Catherine Ramsdale, Sedgefield, GB;

Antony Sou, Sedgefield, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/165 (2006.01); G01D 9/00 (2006.01); G01D 21/00 (2006.01); G01R 19/00 (2006.01); H10B 63/10 (2023.01);
U.S. Cl.
CPC ...
G01R 19/16566 (2013.01); G01D 9/00 (2013.01); G01D 21/00 (2013.01); G01R 19/00 (2013.01); H10B 63/10 (2023.02);
Abstract

A signal measuring apparatus comprising: signal circuitry configured to receive an input signal to be measured; and memory circuitry coupled to the signal circuitry and configured to store information representing a magnitude of a voltage or a current of the input signal; wherein the memory circuitry comprises a first memory cell having a material which is arranged to switch from a first material state to a second material state in response to a first switching signal being applied thereto, wherein the first memory cell is tuned to a first value for the first switching signal so that a current or voltage with a magnitude at or above the first value will cause the material of the first memory cell to switch from the first material state to second material state; wherein the apparatus is configured to apply a measurement signal indicative of the input signal to the first memory cell for switching the material of the first memory cell from the first material state to the second material state in dependence on a magnitude of the voltage or current of the measurement signal.


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