The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Feb. 11, 2022
National Taiwan Normal University, Taipei, TW;
Yi-Hsin Liu, Taipei, TW;
Kai-Chun Chuang, Taipei, TW;
Chi Li, Taipei, TW;
Sheng-Chih Hsu, Taipei, TW;
NATIONAL TAIWAN NORMAL UNIVERSITY, Taipei, TW;
Abstract
A preparation method of monolayer two-dimensional materials, including the following steps: providing a metal acetate dihydrate, with a general formula M(CHCOO)·2HO, in which M may be metal ion cadmium or zinc. Dissolving the metal acetate dihydrate in ethylene diamine and heating to 60° C. for two hours to form a metal cation precursor solution. Providing a chalcogen element powder, in which the chalcogen element powder is selected from sulfur, selenium, or tellurium. Dissolving the chalcogen element powder and sodium borohydride in ethylene diamine, and standing at room temperature for 24 hours to form a chalcogenide-amine precursor solution. Mixing the metal cation precursor solution with the chalcogenide-amine precursor solution to form a mixed solution. Transferring the mixed solution in a high temperature autoclave for reaction to form the monolayer two-dimensional materials.