The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Oct. 14, 2021
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Masanori Inaba, Nagakute, JP;
Kazuhisa Yano, Nagakute, JP;
Tomohiro Takeshita, Nagakute, JP;
Kensaku Kodama, Nagakute, JP;
Toshiyuki Suzuki, Toyota, JP;
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cmor more and 1.0 g/cmor less. The oxide semiconductor is preferably SnOor SnOdoped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.