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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12302707 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Oct. 31, 2023

Display apparatus

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Chulkyu Kang, Yongin-si, KR;

Sangmoo Choi, Yongin-si, KR;

Wonkyu Kwak, Yongin-si, KR;

Jinwoo Park, Yongin-si, KR;

Dongsun Lee, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

KILE PARK REED & HOUTTEMAN PLLC

Primary Examiner:

Lunyi Lao

Assistant Examiner:

Jarurat Suteerawongsa

Int. Cl.
CPC ...
G09G 3/32 (2016.01); G09G 3/3233 (2016.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 77/10 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); G09G 3/3233 (2013.01); H10K 59/1216 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/131 (2023.02); H10K 77/111 (2023.02); G09G 2300/0426 (2013.01); G09G 2320/0242 (2013.01); G09G 2330/021 (2013.01); H10D 30/6731 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/471 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10K 2102/311 (2023.02);
Abstract

A display apparatus includes a substrate including a display area; a first thin film transistor arranged on the display area of the substrate and having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer; a second thin film transistor arranged on the display area of the substrate and having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and a storage capacitor at least partially overlapping the first thin film transistor and having a lower electrode and an upper electrode, wherein the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.

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