The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Mar. 21, 2022
Samsung Display Co., Ltd., Yongin-Si, KR;
Hyunggi Jung, Cheonan-si, KR;
Yongduck Son, Seongnam-si, KR;
Soon Chang Yeon, Seongnam-si, KR;
Younghoon Yoo, Asan-si, KR;
Jaemin Lee, Asan-si, KR;
Dogi Lim, Asan-si, KR;
Soojin Jeong, Hwaseong-si, KR;
Hyungtae Jung, Asan-si, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A transistor is disclosed that includes a substrate, an active layer, a gate electrode, a first electrode, a second electrode, and a first connection electrode. The active includes a first region, a second region, and a channel region between the first region and the second region. The gate electrode is disposed on the active layer and overlaps the channel region. The first electrode is disposed on the substrate and electrically connects to the first region. The second electrode is disposed on the substrate and electrically connects to the second region. The first connection electrode is disposed on the substrate and electrically connects the gate electrode and the second electrode.