The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Feb. 18, 2024
Samsung Display Co., Ltd., Yongin-si, KR;
Dongchan Kim, Yongin-si, KR;
Jiyoung Moon, Yongin-si, KR;
Heechang Yoon, Yongin-si, KR;
Jihye Lee, Yongin-si, KR;
Hakchoong Lee, Yongin-si, KR;
Haemyeong Lee, Yongin-si, KR;
Myungsuk Han, Yongin-si, KR;
Jihwan Yoon, Yongin-si, KR;
Jonghyuk Lee, Yongin-si, KR;
Yoonhyeung Cho, Yongin-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;
Abstract
A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m−1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m−1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.