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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12302685 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Apr. 25, 2024

Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Satoshi Seo, Kanagawa, JP;

Hiromi Seo, Kanagawa, JP;

Kunihiko Suzuki, Kanagawa, JP;

Kanta Abe, Kanagawa, JP;

Yuji Iwaki, Kanagawa, JP;

Naoaki Hashimoto, Kanagawa, JP;

Tsunenori Suzuki, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., , JP;

Attorney:

Husch Blackwell LLP

Primary Examiner:

Omar F Mojadded

Int. Cl.
CPC ...
H10K 50/16 (2023.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/17 (2023.01); H10K 50/81 (2023.01); H10K 50/82 (2023.01); H10K 59/00 (2023.01); H10K 85/00 (2023.01); H10K 85/30 (2023.01); H10K 101/40 (2023.01);
U.S. Cl.
CPC ...
H10K 50/16 (2023.02); H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/171 (2023.02); H10K 50/81 (2023.02); H10K 50/82 (2023.02); H10K 59/00 (2023.02); H10K 85/321 (2023.02); H10K 2101/40 (2023.02);
Abstract

A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

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