The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jun. 07, 2019
Applicant:

The Trustees of Princeton University, Princeton, NJ (US);

Inventors:

Barry P. Rand, Princeton, NJ (US);

Lianfeng Zhao, Jersey City, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 30/35 (2023.01); H01G 9/20 (2006.01); H10K 30/10 (2023.01); H10K 71/12 (2023.01); H10K 71/16 (2023.01); H10K 71/40 (2023.01); H10K 85/30 (2023.01);
U.S. Cl.
CPC ...
H10K 30/35 (2023.02); H01G 9/20 (2013.01); H10K 30/10 (2023.02); H10K 85/30 (2023.02); H10K 71/12 (2023.02); H10K 71/164 (2023.02); H10K 71/40 (2023.02);
Abstract

Provided is a thin film semiconductor device that exploits excitonic characteristics of various organic semiconductor materials. The device may include an anode (), a cathode (), and a donor-acceptor heterojunction () disposed between the anode and the cathode. The donor-acceptor heterojunction may further include an acceptor material () having a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO), and a donor material () comprising a hybrid organic-inorganic metal halide perovskite semiconductor. Other embodiments are disclosed and additional embodiments are also possible.


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