The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jul. 13, 2021
Applicant:

Nikkiso Co., Ltd., Tokyo, JP;

Inventor:

Tetsuhiko Inazu, Hakusan, JP;

Assignee:

NIKKISO CO., LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 20/832 (2025.01); H10H 20/84 (2025.01); H10H 20/856 (2025.01);
U.S. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/831 (2025.01); H10H 20/835 (2025.01); H10H 20/84 (2025.01); H10H 20/856 (2025.01); H10H 20/032 (2025.01); H10H 20/034 (2025.01); H10H 20/0363 (2025.01); H10H 20/0364 (2025.01); H10H 20/825 (2025.01);
Abstract

A semiconductor light-emitting element includes: an n-side contact electrode in contact with an n-type semiconductor layer; a p-side contact electrode in contact with a p-type semiconductor layer; an n-side first electrode in contact with the n-side contact electrode; a p-side first electrode in contact with the p-side contact electrode; a first insulating layer covering the n-side and p-side first electrodes; an n-side second electrode on the first insulating layer and in contact with the n-side first electrode; a p-side second electrode on the first insulating layer and in contact with the p-side first electrode; a second insulating layer covering the n-side and p-side second electrodes; an n-side pad electrode on the second insulating layer and in contact with the n-side second electrode; and a p-side pad electrode on the second insulating layer and in contact with the p-side second electrode.


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