The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Feb. 08, 2024
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventor:
Yasunori Agata, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/60 (2025.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/60 (2025.01); H01L 21/2636 (2013.01); H01L 21/26506 (2013.01); H10D 8/00 (2025.01); H10D 12/481 (2025.01);
Abstract
Provided is a semiconductor device which includes a semiconductor substrate that has an upper surface and a lower surface and includes a bulk donor. A hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed between the lower surface of the semiconductor substrate and the first hydrogen concentration peak. An intermediate region including an intermediate donor concentration is provided between the first hydrogen concentration peak and the second hydrogen concentration peak.