The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Dec. 23, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Naoto Kaguchi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object is to provide a semiconductor device that implements cost reduction as well as determination of withstand voltage characteristics. A semiconductor substrate includes a semiconductor element on the front surface thereof and a back surface electrode on the back surface thereof that controls the operation of the semiconductor element. A first electrode and a second electrode are provided in a terminal region outside an active region in which the semiconductor element is formed. An insulating film is provided between the first electrode and the second electrode. The second electrode is provided on an insulating interlayer film provided on the front surface of the semiconductor substrate. The first electrode is in contact with the front surface of the semiconductor substrate and is provided on the semiconductor substrate closer to an end portion thereof than the second electrode is, and is electrically connected to the back surface electrode.