The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Oct. 27, 2021
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Masaharu Yamaji, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 12/00 (2025.01); H10D 62/17 (2025.01); H10D 64/27 (2025.01); H10D 84/80 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/107 (2025.01); H10D 12/411 (2025.01); H10D 62/393 (2025.01); H10D 64/281 (2025.01); H10D 84/811 (2025.01); H10D 84/854 (2025.01); H10D 84/856 (2025.01);
Abstract

A semiconductor device includes: a well region of a second conductivity-type deposited on a surface layer of a semiconductor layer of a first conductivity-type; a breakdown voltage region of the second conductivity-type arranged to surround the well region and having a lower impurity concentration than the well region; a base region of the first conductivity-type arranged to surround the breakdown voltage region; a carrier supply region of the second conductivity-type arranged on a surface layer of the base region and serving as a level shifter; and a carrier reception region of the level shifter, wherein the carrier reception region is formed of a first universal contact region including a region of the first conductivity-type and a region of the second conductivity-type arranged in contact with each other.


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