The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Oct. 20, 2022
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Hitoshi Maeda, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
H10D 30/694 (2025.01); H10D 30/68 (2025.01); H10D 30/6891 (2025.01); H10D 30/69 (2025.01);
Abstract
A height of an upper surface of a control gate electrode is lower than a highest position of a lower surface of a silicide layer on a memory gate electrode adjacent to the control gate electrode via an ONO film. As a result, a structure in contact with the ONO film between the control gate electrode and the memory gate electrode is only the control gate electrode and the memory gate electrode made of polysilicon.