The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jan. 17, 2020
Applicant:
Guangdong Zhineng Technologies, Co. Ltd., Guangdong, CN;
Inventor:
Zilan Li, Guangdong, CN;
Assignee:
GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD., Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/10 (2025.01); H10D 62/40 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/117 (2025.01); H10D 62/405 (2025.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01);
Abstract
The present disclosure relates to a semiconductor device, comprising: a groove; a first channel layer positioned within the groove; and a first barrier layer positioned within the groove, wherein a first heterojunction having a vertical interface is included between the first channel layer and the first barrier layer and 2DEG or 2DHG is formed in the first heterojunction. The present disclosure also relates to a method of manufacturing a semiconductor device.