The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Nov. 02, 2021
Nantong Sanrise Integrated Circuit Co., Ltd, Jiangsu, CN;
Xiang Zhou, Jiangsu, CN;
Nantong Sanrise Integrated Circuit Co., LTD, Jiangsu, CN;
Abstract
The present application discloses a planar High-Electron-Mobility Transistor (HEMT), which includes a hetero-junction consisting of a first semiconductor epitaxial layer and a second semiconductor epitaxial layer, and two-dimensional electron gas located at an interface of the hetero-junction; a bottom surface of a gate trench of a trench gate is located at a bottom of the two-dimensional electron gas to cut off the two-dimensional electron gas; when gate-source voltage is higher than or equal to threshold voltage, an inversion layer is formed on a surface of the first semiconductor epitaxial layer covered by side surfaces and a bottom surface of a gate conductive material layer, and the source-end and drain-end two-dimensional electron gas is conducted to enable the device to be on; when the gate-source voltage is lower than the threshold voltage, the source-end and drain-end two-dimensional electron gas is cut off to enable the device to be off.