The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Apr. 14, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/60 (2006.01); H10B 41/27 (2023.01); H10B 43/40 (2023.01); H10B 43/10 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/60 (2013.01); H10B 41/27 (2023.02); H10B 43/40 (2023.02); H10B 43/10 (2023.02); H10B 43/50 (2023.02);
Abstract
A semiconductor memory device includes a memory structure including a plurality of memory cells which are disposed on a cell region of a source plate; a plurality of contact plugs passing through the source plate in a coupling region of the source plate including at least a portion of a center portion of the source plate, and separated from the source plate by a dielectric layer pattern; a discharge contact passing through the source plate in the coupling region, and coupled to the center portion of the source plate; and a discharge region coupled to the discharge contact. The discharge region is located in a substrate below the source plate.