The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Sep. 17, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Akitsugu Niwa, Tokyo, JP;
Kenichi Abe, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The semiconductor laser device comprises a laser part, a waveguide for propagating laser light emitted by the laser part, and a photodetector for detecting the laser light which are formed on the same semiconductor substrate. The photodetector includes a p-type contact layer which is formed above the side of the waveguide on the side opposite to the semiconductor substrate and is connected to an anode electrode, an n-type contact layer connected to a cathode electrode, and an undoped layer formed between the p-type contact layer and the n-type contact layer. The undoped layer and the n-type contact layer in the photodetector include a main light receiving part disposed above the waveguide so as to encompass the waveguide, and an enlarged part disposed so as not to encompass the waveguide while connected to the main light receiving part.