The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Sep. 21, 2023
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Inventors:
Mitsutoshi Otaki, Susono, JP;
Jun Yoshida, Mishima, JP;
Kazuhiro Suzuki, Hadano, JP;
Masanori Harata, Kariya, JP;
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); C01B 33/021 (2006.01); H01B 1/04 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/38 (2006.01); H01M 10/0525 (2010.01); H01M 10/44 (2006.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); C01B 33/021 (2013.01); H01B 1/04 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 10/0525 (2013.01); H01M 10/44 (2013.01); C01P 2002/74 (2013.01);
Abstract
A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less.