The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Mar. 25, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyung Seok Kim, Yongin-si, KR;

Si Sung Kim, Yongin-si, KR;

Jong Jin Lee, Yongin-si, KR;

Dong Eon Lee, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 23/00 (2006.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 25/167 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/38 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 24/95 (2013.01); H01L 33/0093 (2020.05); H01L 33/20 (2013.01); H01L 2224/24051 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/25175 (2013.01); H01L 2224/95133 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light emitting element includes a first semiconductor layer; an emission layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the emission layer; an electrode layer disposed on the second semiconductor layer; and an insulating film surrounding side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer and surrounding a portion of the electrode layer at an end portion of the light emitting element on which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer; a second surface facing the first surface and having a width less than a width of the first surface; and a side surface that connects the first surface and the second surface and has a slope in a range of about 75° to about 90° with respect to the first surface of the electrode layer.


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