The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Sep. 01, 2020
Plessey Semiconductors Limited, Plymouth, GB;
Andrea Pinos, Plymouth, GB;
Plessey Semiconductors Limited, Plymouth, GB;
Abstract
A Light Emitting Diode (LED) precursor comprising a first semiconducting layer, and a monolithic LED structure provided on a growth surface of the first semiconducting layer is provided. The first semiconducting layer includes a mesa structure extending from a major surface of the first semiconducting layer. The first semiconducting layer comprises a first semiconducting sublayer having a first in-plane lattice constant, and a strain-relaxed sublayer. The strain relaxed sublayer comprises a Group III-nitride provided across the first semiconducting sublayer, wherein the strain relaxed sublayer provides the mesa surface of the mesa structure, such that the mesa surface has a second in-plane lattice constant which is larger than the first in-plane lattice constant. The monolithic LED structure is provided such that the monolithic LED structure covers the mesa surface.