The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Mar. 10, 2023
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Energy Systems & Solutions Corporation, Kawasaki, JP;

Inventors:

Kazushige Yamamoto, Yokohama Kanagawa, JP;

Yukitami Mizuno, Tokyo, JP;

Yuya Honishi, Saitama Saitama, JP;

Soichiro Shibasaki, Tokyo, JP;

Naoyuki Nakagawa, Tokyo, JP;

Yasutaka Nishida, Tokyo, JP;

Mutsuki Yamazaki, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0687 (2012.01); H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0687 (2013.01); H01L 31/0336 (2013.01);
Abstract

A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80≤a1≤2.20, 0.005≤b1≤0.05, 0≤c1≤0.20, and 0.60≤d1≤1.00.


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