The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Oct. 12, 2023
Fuji Electric Co., Ltd., Kanagawa, JP;
Takashi Yoshimura, Matsumoto, JP;
Yuichi Onozawa, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Misaki Meguro, Matsumoto, JP;
Motoyoshi Kubouchi, Matsumoto, JP;
Naoko Kodama, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device, including a semiconductor substrate having a transistor portion and a diode portion, a drift region of a first conductivity type provided in the semiconductor substrate, a first electrode provided on one main surface side of the semiconductor substrate, and a second electrode provided on another main surface side of the semiconductor substrate, is provided. The diode portion includes a high concentration region and a crystalline defect region. The high concentration region has a higher doping concentration than the drift region and includes hydrogen. The doping concentration of the high concentration region at a peak position in a depth direction of the semiconductor substrate is equal to or less than 1.0×10/cm. The crystalline defect region is provided on the one main surface side of the semiconductor substrate relative to the peak position, has a higher crystalline defect density than the drift region, and includes hydrogen.