The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Nov. 27, 2023
Quantum-si Incorporated, Branford, CT (US);
Eric A.g. Webster, Santa Clara, CA (US);
Changhoon Choi, Palo Alto, CA (US);
Dajiang Yang, San Jose, CA (US);
Xin Wang, San Jose, CA (US);
Todd Rearick, Cheshire, CT (US);
Kyle Preston, Guilford, CT (US);
Ali Kabiri, Guilford, CT (US);
Gerard Schmid, Guilford, CT (US);
Quantum-Si Incorporated, Branford, CT (US);
Abstract
Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.