The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Aug. 04, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungmyung Kang, Hwaseong-si, KR;

Hoyoung Tang, Suwon-si, KR;

Inhak Lee, Hwaseong-si, KR;

Sangyeop Baeck, Yongin-si, KR;

Dongwook Seo, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/4074 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4074 (2013.01); G11C 11/4094 (2013.01);
Abstract

A memory device includes a bit cell array including a plurality of bit cells connected to a first auxiliary line to which a cell power voltage is supplied; a write driver configured to apply a bit line voltage corresponding to write data to a bit line extending in a column direction of the bit cell array during a write operation; and a write auxiliary circuit connected to the first auxiliary line and a second auxiliary line extending in parallel to the first auxiliary line, and configured to lower a cell power voltage for a first bit cell spaced apart from the write driver during the write operation, wherein the cell power voltage is supplied to the first auxiliary line through the second auxiliary line, and in sequence from the first bit cell to a second bit cell adjacent to the write driver through the first auxiliary line.


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