The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Oct. 25, 2021
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Toshiki Kaneko, Tokyo, JP;

Akihiro Hanada, Tokyo, JP;

Assignee:

JAPAN DISPLAY INC., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/16766 (2019.01); G02F 1/167 (2019.01); G02F 1/16756 (2019.01); H01L 27/12 (2006.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
G02F 1/16766 (2019.01); G02F 1/16756 (2019.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); G02F 1/167 (2013.01);
Abstract

According to one embodiment, a display device includes a first oxide semiconductor, a second oxide semiconductor, a first source electrode contacting the first oxide semiconductor in a first opening, a first drain electrode contacting the first oxide semiconductor in a second opening, a second source electrode contacting the second oxide semiconductor in a third opening, and a second drain electrode contacting the second oxide semiconductor in a fourth opening. A length of a layer stack of the second insulating film and the first source electrode between the first opening and the second opening is greater than a length of a layer stack of the second insulating film and the second source electrode between the third opening and the fourth opening.


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