The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Dec. 16, 2022
Applicant:

Analog Devices International Unlimited Company, Limerick, IE;

Inventors:

Onur Necdet Urs, Hamburg, DE;

Jan Kubik, Limerick, IE;

Fernando Franco, Limerick, IE;

Jochen Schmitt, Biedenkopf, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); G01D 5/16 (2006.01); H10N 59/00 (2023.01);
U.S. Cl.
CPC ...
G01R 33/098 (2013.01); G01D 5/16 (2013.01); G01R 33/091 (2013.01); G01R 33/093 (2013.01); H10N 59/00 (2023.02);
Abstract

A tunnel magnetoresistive (TMR) multi-turn (MT) sensor can include sensing elements which can be provided with two or more electrical contacts for performing current-in-plane tunnelling measurements. The two or more electrical contacts may be provided above or below the TMR sensing elements. One or more read-out pillars formed from TMR sensing material may be provided, the read-out pillars being electrically connected to one or more TMR sensing elements. The read-out pillars can be configured such that the resistance observed in the read-out pillars is negligible or near-negligible relative to that observed in the TMR sensing elements, such that the measured output signal only reflects the change in resistance experience by the TMR sensing elements in the presence of an externally rotating magnetic field.


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