The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jan. 23, 2023
University of Houston System, Houston, TX (US);
Zhifeng Ren, Pearland, TX (US);
Jiming Bao, Pearland, TX (US);
Shuai Yue, Pearland, TX (US);
Fei Tian, Richmond, TX (US);
Geethal Amila Udalamatta Gamage, Fremont, CA (US);
Gang Chen, Carlisle, MA (US);
Jungwoo Shin, Cambridge, MA (US);
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (US);
Abstract
Herein provided are cubic boron arsenide (c-BAs) single crystals having an unexpectedly high ambipolar mobility at room temperature, μ, at one or more locations thereof that is greater than or equal to 1500, 1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 3000, 4000, 5000, 6000, 7000, 8000, 9000, or 10000 cmVs, wherein the ambipolar mobility is defined as: μ=2μμ/(μ+μ), wherein μis electron mobility and μis hole mobility, and having a room temperature thermal conductivity at the one or more locations thereof that is greater than or equal to 1000 WmK. Methods of making and using the c-BAs single crystals are also provided.