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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12295253 B1

PDFFull Text
Date of Patent:
May. 06, 2025

Filed:

Jun. 17, 2021

Light-emitting device and electronic apparatus including same

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Namsu Kang, Yongin-si, KR;

Minho Park, Yongin-si, KR;

Dongkyu Lee, Yongin-si, KR;

Jongwon Lee, Yongin-si, KR;

Hyunshik Lee, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Womble Bond Dickinson (US) LLP

Primary Examiner:

Shane Fang

Int. Cl.
CPC ...
H10K 85/60 (2022.12); H10K 50/11 (2022.12); H10K 50/15 (2022.12); H10K 50/16 (2022.12); H10K 50/17 (2022.12); H10K 50/18 (2022.12); H10K 50/19 (2022.12); H10K 101/10 (2022.12); H10K 101/30 (2022.12);
U.S. Cl.
CPC ...
H10K 85/626 (2023.01); H10K 85/624 (2023.01); H10K 85/654 (2023.01); H10K 85/6572 (2023.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 50/18 (2023.01); H10K 50/19 (2023.01); H10K 2101/10 (2023.01); H10K 2101/30 (2023.01);
Abstract

A light-emitting device includes: a first electrode; a second electrode; m emission units between the first electrode and the second electrode; and m−1 charge generation layer(s), each located between two adjacent emission units, and including m−1 n-type charge generation layer(s) and m−1 p-type charge generation layer(s). The m emission units each include a hole transport region, an emission layer, and an electron transport region. A first hole transport region in a first emission unit closest to the first electrode may include a hole transfer layer and a hole injection layer and/or a hole transport layer. The hole transfer layer may be a single layer consisting of an electron-transporting compound including a phosphine oxide group (P═O), a phosphine sulfide group (P═S), a π electron-deficient nitrogen-containing C-Ccyclic group, or any combination thereof. A highest occupied molecular orbital (HOMO) energy level of the hole transfer layer may be about −6.0 eV to about −5.3 eV.

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